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    Applications of Chalcogenides: S, Se, and Te [[electronic resource] /] : монография / ed. Ahluwalia, Gurinder Kaur. - 1st ed. 2017. - [S. l. : s. n.]. - XIII, 461 p. 328 illus., 213 illus. in color. - Б. ц.
    Зміст:
Part I: Introduction --
Fundamentals of Chalcogenides in Crystalline, Amorphous and Nanocrystalline Forms --
Techniques for Structural Investigations (Theory and Experimental) --
Nanostructured Chalcogenides --
Part II: Sulfur --
Optical Fibers --
Part III: Selenium --
Imaging and Detection --
Electrochemical Sensors --
Biomedical Applications --
Selenide Glass Fibers for Bio-Chemical Infrared Sensing --
Part IV: Tellurium --
Data Storage Devices --
Photovoltaics --
Infrared Detectors.
Рубрики: Optical materials.
   Electronic materials.
   Semiconductors.
   Nanotechnology.
   Inorganic chemistry.
   Optical and Electronic Materials.
   Semiconductors.
   Nanotechnology.
   Inorganic Chemistry.
Анотація: This book introduces readers to a wide range of applications for elements in Group 16 of the periodic table, such as, optical fibers for communication and sensing, X-ray imaging, electrochemical sensors, data storage devices, biomedical applications, photovoltaics and IR detectors, the rationale for these uses, the future scope of their applications, and expected improvements to existing technologies. Following an introductory section, the book is broadly divided into three parts—dealing with Sulfur, Selenium, and Tellurium. The sections cover the basic structure of the elements and their compounds in bulk and nanostructured forms; properties that make these useful for various applications, followed by applications and commercial products. As the global technology revolution necessitates the search for new materials and more efficient devices in the electronics and semiconductor industry, Applications of Chalcogenides: S, Se, and Te is an ideal book for a wide range of readers in industry, government and academic research facilities looking beyond silicon for materials used in the electronic and optoelectronic industry as well as biomedical applications.

Перейти: https://doi.org/10.1007/978-3-319-41190-3

Дод.точки доступу:
Ahluwalia, Gurinder Kaur. \ed.\; SpringerLink (Online service)
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    Yanguas-Gil, Angel.
    Growth and Transport in Nanostructured Materials [[electronic resource] :] : reactive Transport in PVD, CVD, and ALD / / Angel. Yanguas-Gil ; . - 1st ed. 2017. - [S. l. : s. n.]. - XI, 128 p. 57 illus., 20 illus. in color. - Б. ц.
    Зміст:
Introduction --
Fundamentals of Gas Phase Transport on Nanostructured Materials --
Modeling Thin Film Growth on Nanostructured Materials --
Advanced Concepts.
Рубрики: Materials—Surfaces.
   Thin films.
   Surfaces (Physics).
   Interfaces (Physical sciences).
   Nanochemistry.
   Semiconductors.
   Energy storage.
   Surfaces and Interfaces, Thin Films.
   Surface and Interface Science, Thin Films.
   Nanochemistry.
   Semiconductors.
   Energy Storage.
Анотація: This book will address the application of gas phase thin film methods, including techniques such as evaporation, sputtering, CVD, and ALD to the synthesis of materials on nanostructured and high aspect-ratio high surface area materials. We have chosen to introduce these topics and the different application fields from a chronological perspective: we start with the early concepts of step coverage and later conformality in semiconductor manufacturing, and how later on the range of application branched out to include others such as energy storage, catalysis, and more broadly nanomaterials synthesis. The book will describe the ballistic and continuum descriptions of gas transport on nanostructured materials and then will move on to incorporate the impact of precursor-surface interaction. We will finally conclude approaching the subjects of feature shape evolution and the connection between nano and reactor scales and will briefly present different advanced algorithms that can be used to effectively compute particle transport, in some cases borrowing from other disciplines such as radiative heat transfer. The book gathers in a single place information scattered over thirty years of scientific research, including the most recent results in the field of Atomic Layer Deposition. Besides a mathematical description of the fundamentals of thin film growth in nanostructured materials, it includes analytic expressions and plots that can be used to predict the growth using gas phase synthesis methods in a number of ideal approximations. The focus on the fundamental aspects over particular processes will broaden the appeal and the shelf lifetime of this book. The reader of this book will gain a thorough understanding on the coating of high surface area and nanostructured materials using gas phase thin film deposition methods, including the limitations of each technique. Those coming from the theoretical side will gain the knowledge required to model the growth process, while those readers more interested in the process development will gain the theoretical understanding will be useful for process optimization.

Перейти: https://doi.org/10.1007/978-3-319-24672-7

Дод.точки доступу:
Yanguas-Gil, Angel. \.\; SpringerLink (Online service)
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    Dragoman, Mircea.
    2D Nanoelectronics [[electronic resource] :] : physics and Devices of Atomically Thin Materials / / Mircea. Dragoman, Dragoman, Daniela. ; . - 1st ed. 2017. - [S. l. : s. n.]. - XII, 199 p. 220 illus., 131 illus. in color. - Б. ц.
    Зміст:
Carbon-based nanoelectronics --
Metallic chalcogenides nanoelectronics --
Silicene and germanium nanoelectronics --
2D electron gas nanoelctronics --
Other 2D materials.
Рубрики: Optical materials.
   Electronic materials.
   Semiconductors.
   Nanotechnology.
   Lasers.
   Photonics.
   Solid state physics.
   Optical and Electronic Materials.
   Semiconductors.
   Nanotechnology and Microengineering.
   Optics, Lasers, Photonics, Optical Devices.
   Solid State Physics.
Анотація: This book is dedicated to the new two-dimensional one-atomic-layer-thick materials such as graphene, metallic chalcogenides, silicene and other 2D materials. The book describes their main physical properties and applications in nanoelctronics, photonics, sensing and computing. A large part of the book deals with graphene and its amazing physical properties. Another important part of the book deals with semiconductor monolayers such as MoS2 with impressive applications in photonics, and electronics. Silicene and germanene are the atom-thick counterparts of silicon and germanium with impressive applications in electronics and photonics which are still unexplored. Consideration of two-dimensional electron gas devices conclude the treatment. The physics of 2DEG is explained in detail and the applications in THz and IR region are discussed. Both authors are working currently on these 2D materials developing theory and applications.

Перейти: https://doi.org/10.1007/978-3-319-48437-2

Дод.точки доступу:
Dragoman, Daniela.; Dragoman, Mircea. \.\; SpringerLink (Online service)
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    Elementary Processes in Organic Photovoltaics [[electronic resource] /] : монография / ed. Leo, Karl. - 1st ed. 2017. - [S. l. : s. n.]. - IX, 421 p. 244 illus., 184 illus. in color. - Б. ц.
    Зміст:
From the contents: Polymeric solar cells: Molecular orientation, structure, and optoelectronic performance --
An integrated approach towards highly efficient bulk-heterojunction solar cells based on dendritic oligothiophenes --
Organic solar cells based on oligothiophene derivatives --
Charge separation at nanostructured molecular donoracceptor interfaces --
p-B-n organic junctions for efficient photovoltaics --
Interplay between microscopic structure and intermolecular charge transfer processes in polymer-fullerene bulk-heterojunctions --
Organic solar cells from optimized self-assembling block copolymers with controlled nanoscale morphology.
Рубрики: Polymers  .
   Optical materials.
   Electronic materials.
   Renewable energy resources.
   Semiconductors.
   Physical chemistry.
   Electronics.
   Microelectronics.
   Polymer Sciences.
   Optical and Electronic Materials.
   Renewable and Green Energy.
   Semiconductors.
   Physical Chemistry.
   Electronics and Microelectronics, Instrumentation.
Анотація: This volume presents the results of a multi-year research programme funded by the Deutsche Forschungsgemeinschaft (German Research Council), which explains how organic solar cells work. In this new promising photovoltaic technology, carbon-based materials are deposited by low-cost methods onto flexible substrates, thus allowing devices which open completely new applications like transparent coatings for building, solar cells integrated into clothing or packages, and many more. The investigation of organic solar cells is an interdisciplinary topic, covering physics, chemistry and engineering. The different chapters address topics ranging from the synthesis of new organic materials, to the characterization of the elementary processes such as exciton transport and separation, and the principles of highly efficient device design.

Перейти: https://doi.org/10.1007/978-3-319-28338-8

Дод.точки доступу:
Leo, Karl. \ed.\; SpringerLink (Online service)
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    Photoactive Semiconductor Nanocrystal Quantum Dots [[electronic resource] :] : fundamentals and Applications / / ed. Credi, Alberto. - 1st ed. 2017. - [S. l. : s. n.]. - VIII, 174 p. 96 illus., 78 illus. in color. - Б. ц.
    Зміст:
Excited-State Dynamics in Colloidal Semiconductor Nanocrystals --
Semiconductor Quantum Dots with Photoresponsive Ligands --
Interfacing Luminescent Quantum Dots with Functional Molecules for Optical Sensing Applications --
Light-Harvesting Antennae Based on Silicon Nanocrystals --
Luminescent Rare-earth-based Nanoparticles: A Summarized Overview of their Synthesis, Functionalization, and Applications --
Recent Progress in Quantum Dot Based White Light-Emitting Devices --
Hybrid Semiconductor–Metal Nanorods as Photocatalysts.
qds="" in="" biomolecular="" devices --
luminescent="" heteronanocrystals.
Рубрики: Physical chemistry.
   Semiconductors.
   Nanotechnology.
   Nanochemistry.
   Physical Chemistry.
   Semiconductors.
   Nanotechnology.
   Nanochemistry.
Анотація: The series Topics in Current Chemistry Collections presents critical reviews from the journal Topics in Current Chemistry organized in topical volumes. The scope of coverage is all areas of chemical science including the interfaces with related disciplines such as biology, medicine and materials science. The goal of each thematic volume is to give the non-specialist reader, whether in academia or industry, a comprehensive insight into an area where new research is emerging which is of interest to a larger scientific audience. Each review within the volume critically surveys one aspect of that topic and places it within the context of the volume as a whole. The most significant developments of the last 5 to 10 years are presented using selected examples to illustrate the principles discussed. The coverage is not intended to be an exhaustive summary of the field or include large quantities of data, but should rather be conceptual, concentrating on the methodological thinking that will allow the non-specialist reader to understand the information presented. Contributions also offer an outlook on potential future developments in the field.

Перейти: https://doi.org/10.1007/978-3-319-51192-4

Дод.точки доступу:
Credi, Alberto. \ed.\; SpringerLink (Online service)
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    Power GaN Devices [[electronic resource] :] : materials, Applications and Reliability / / ed.: Meneghini, Matteo., Meneghesso, Gaudenzio., Zanoni, Enrico. - 1st ed. 2017. - [S. l. : s. n.]. - X, 380 p. 306 illus., 266 illus. in color. - Б. ц.
    Зміст:
1 Properties and advantages of gallium nitride; Daisuke Ueda --
2 Substrate issues and epitaxial growth; Stacia Keller --
3 GaN-on-Silicon CMOS compatible process; Denis Marcon --
4 Lateral GaN-based power devices; Umesh Mishra --
5 GaN-based vertical transistors; Srabanti Chowduri --
6 GaN-based nanowire transistors; Tomas Palacios --
7 Deep level characterization: electrical and optical methods; Robert Kaplar --
8 Modeling of GaN HEMTs: from device-level simulation to virtual prototyping; Gilberto Curatola, Giovanni Verzellesi --
9 Performance-limiting defects in GaN-based HEMTs: from surface states to common impurities; Bisi, Rossetto, De Santi, Meneghini, Meneghesso, Zanoni --
10 Cascode configuration for normally-off devices; Primit Parikh --
11 Gate injection transistors: E-mode operation and conductivity modulation; Tetsuso Ueda --
12 Fluorine implanted E-mode transistors; Kevin Chen --
13 Drift effects in GaN HV power transistors; Joachim Wuerfl --
14 Reliability Aspects of 650V rated GaN Power Devices; P. Moens, A. Banerjee --
15 Switching Characteristics of Gallium-Nitride Transistors: system level issues; Fred Lee, Qiang Li, Xiucheng Huang and Zhengyang Liu.
Рубрики: Power electronics.
   Semiconductors.
   Optical materials.
   Electronic materials.
   Energy systems.
   Electronics.
   Microelectronics.
   Power Electronics, Electrical Machines and Networks.
   Semiconductors.
   Optical and Electronic Materials.
   Energy Systems.
   Electronics and Microelectronics, Instrumentation.
Анотація: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.

Перейти: https://doi.org/10.1007/978-3-319-43199-4

Дод.точки доступу:
Meneghini, Matteo. \ed.\; Meneghesso, Gaudenzio. \ed.\; Zanoni, Enrico. \ed.\; SpringerLink (Online service)
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    Askerzade, Iman.
    Modern Aspects of Josephson Dynamics and Superconductivity Electronics [[electronic resource] /] : монография / Iman. Askerzade, Bozbey, Ali., Canturk, Mehmet. ; . - 1st ed. 2017. - [S. l. : s. n.]. - XVI, 186 p. 161 illus., 66 illus. in color. - Б. ц.
Рубрики: Superconductivity.
   Superconductors.
   Electronics.
   Microelectronics.
   Optical materials.
   Electronic materials.
   Electronic circuits.
   Semiconductors.
   Strongly Correlated Systems, Superconductivity.
   Electronics and Microelectronics, Instrumentation.
   Optical and Electronic Materials.
   Electronic Circuits and Devices.
   Semiconductors.
Анотація: In this book new experimental investigations of properties of Josephson junctions and systems are explored with the help of recent developments in superconductivity. The theory of the Josephson effect is presented taking into account the influence of multiband and anisotropy effects in new superconducting compounds. Anharmonicity effects in current-phase relation on Josephson junctions dynamics are discussed. Recent studies in analogue and digital superconductivity electronics are presented. Topics of special interest include resistive single flux quantum logic in digital electronics. Application of Josephson junctions in quantum computing as superconducting quantum bits are analyzed. Particular attention is given to understanding chaotic behaviour of Josephson junctions and systems. The book is written for graduate students and researchers in the field of applied superconductivity.

Перейти: https://doi.org/10.1007/978-3-319-48433-4

Дод.точки доступу:
Bozbey, Ali.; Canturk, Mehmet.; Askerzade, Iman. \.\; SpringerLink (Online service)
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    In Search of the Next Memory [[electronic resource] :] : inside the Circuitry from the Oldest to the Emerging Non-Volatile Memories / / ed.: Gastaldi, Roberto., Campardo, Giovanni. - 1st ed. 2017. - [S. l. : s. n.]. - XVIII, 247 p. 185 illus. - Б. ц.
    Зміст:
Historical overview of solid-state non-volatile memories --
State of art limitations --
New approaches to non-volatile memories --
Core circuitry --
Periphery circuitry --
Functional interfaces --
Error management --
Algorithm to survive --
Final considerations.
Рубрики: Electronic circuits.
   Computer memory systems.
   Semiconductors.
   Electronics.
   Microelectronics.
   Circuits and Systems.
   Memory Structures.
   Semiconductors.
   Electronics and Microelectronics, Instrumentation.
Анотація: This book provides students and practicing chip designers with an easy-to-follow yet thorough, introductory treatment of the most promising emerging memories under development in the industry. Focusing on the chip designer rather than the end user, this book offers expanded, up-to-date coverage of emerging memories circuit design. After an introduction on the old solid-state memories and the fundamental limitations soon to be encountered, the working principle and main technology issues of each of the considered technologies (PCRAM, MRAM, FeRAM, ReRAM) are reviewed and a range of topics related to design is explored: the array organization, sensing and writing circuitry, programming algorithms and error correction techniques are reviewed comparing the approach followed and the constraints for each of the technologies considered. Finally the issue of radiation effects on memory devices has been briefly treated. Additionally some considerations are entertained about how emerging memories can find a place in the new memory paradigm required by future electronic systems. This book is an up-to-date and comprehensive introduction for students in courses on memory circuit design or advanced digital courses in VLSI or CMOS circuit design. It also serves as an essential, one-stop resource for academics, researchers and practicing engineers.

Перейти: https://doi.org/10.1007/978-3-319-47724-4

Дод.точки доступу:
Gastaldi, Roberto. \ed.\; Campardo, Giovanni. \ed.\; SpringerLink (Online service)
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    Recent Trends in Materials and Devices [[electronic resource] :] : proceedings ICRTMD 2015 / / ed.: Jain, Vinod Kumar., Rattan, Sunita., Verma, Abhishek. - 1st ed. 2017. - [S. l. : s. n.]. - XXVII, 547 p. 315 illus., 226 illus. in color. - Б. ц.
    Зміст:
Thermal Characterization of Single-Walled Carbon Nanotubes and Tungsten Oxide-Based Nanomaterials via Raman Spectroscopy --
Carbon: The Soul of Future Nanoelectronics --
Antireflection Properties of Multi-Crystalline Black Silicon with Acid Textured surfaces using Two Step Metal Assisted Chemical Etching --
Enhanced Removal of Cationic dye Methylene blue from aqueous solution using Nanocellulose prepared from agricultural waste Sugarcane bagasse --
A Review on Thermophysical Properties of Nanoparticle-Enhanced Phase Change Materials for Thermal Energy Storage.
Рубрики: Nanoscale science.
   Nanoscience.
   Nanostructures.
   Optical materials.
   Electronic materials.
   Semiconductors.
   Energy storage.
   Nanotechnology.
   Nanoscale Science and Technology.
   Optical and Electronic Materials.
   Semiconductors.
   Energy Storage.
   Nanotechnology.
Анотація: This book presents the proceedings of the International Conference on Recent Trends in Materials and Devices, which was conceived as a major contribution to large-scale efforts to foster Indian research and development in the field in close collaboration with the community of non-resident Indian researchers from all over the world. The research articles collected in this volume - selected from among the submissions for their intrinsic quality and originality, as well as for their potential value for further collaborations - document and report on a wide range of recent and significant results for various applications and scientific developments in the areas of Materials and Devices. The technical sessions covered include photovoltaics and energy storage, semiconductor materials and devices, sensors, smart and polymeric materials, optoelectronics, nanotechnology and nanomaterials, MEMS and NEMS, as well as emerging technologies.

Перейти: https://doi.org/10.1007/978-3-319-29096-6

Дод.точки доступу:
Jain, Vinod Kumar. \ed.\; Rattan, Sunita. \ed.\; Verma, Abhishek. \ed.\; SpringerLink (Online service)
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10.

    Spin Physics in Semiconductors [[electronic resource] /] : монография / ed. Dyakonov, Mikhail I. - 2nd ed. 2017. - [S. l. : s. n.]. - XXIII, 532 p. 216 illus., 28 illus. in color. - Б. ц.
    Зміст:
Basics of Semiconductor and Spin Physics --
Spin Dynamics of Free Carriers in Quantum Wells --
Exciton Spin Dynamics in Semiconductor Quantum Wells --
Exciton Spin Dynamics in Semiconductor Quantum Dots --
Time-Resolved Spin Dynamics and Spin Noise Spectroscopy --
Coherent Spin Dynamics of Carriers --
Spin Properties of Confined Electrons in Si --
Spin Hall Effect --
Spin-Photogalvanics --
Spin Injection --
Dynamic Nuclear Polarization and Nuclear Fields --
Nuclear-Electron Spin Interactions in the Quantum Hall Regime --
Diluted Magnetic Semiconductors: Basic Physics and Optical Properties. .
Рубрики: Semiconductors.
   Magnetism.
   Magnetic materials.
   Nanotechnology.
   Electrical engineering.
   Semiconductors.
   Magnetism, Magnetic Materials.
   Nanotechnology.
   Electrical Engineering.
Анотація: This book offers an extensive introduction to the extremely rich and intriguing field of spin-related phenomena in semiconductors. In this second edition, all chapters have been updated to include the latest experimental and theoretical research. Furthermore, it covers the entire field: bulk semiconductors, two-dimensional semiconductor structures, quantum dots, optical and electric effects, spin-related effects, electron-nuclei spin interactions, Spin Hall effect, spin torques, etc. Thanks to its self-contained style, the book is ideally suited for graduate students and researchers new to the field.

Перейти: https://doi.org/10.1007/978-3-319-65436-2

Дод.точки доступу:
Dyakonov, Mikhail I. \ed.\; SpringerLink (Online service)
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11.

    Schlesinger, Raphael.
    Energy-Level Control at Hybrid Inorganic/Organic Semiconductor Interfaces [[electronic resource] /] : монография / Raphael. Schlesinger ; . - 1st ed. 2017. - [S. l. : s. n.]. - XVIII, 211 p. 88 illus., 52 illus. in color. - Б. ц.
    Зміст:
Introduction --
Fundamentals --
Theory of Experimental Methods --
Methodology and Experimental Setups --
Results and Discussion --
Conclusion. .
Рубрики: Surfaces (Physics).
   Interfaces (Physical sciences).
   Thin films.
   Optical materials.
   Electronic materials.
   Spectroscopy.
   Microscopy.
   Semiconductors.
   Surface and Interface Science, Thin Films.
   Optical and Electronic Materials.
   Spectroscopy and Microscopy.
   Semiconductors.
Анотація: This work investigates the energy-level alignment of hybrid inorganic/organic systems (HIOS) comprising ZnO as the major inorganic semiconductor. In addition to offering essential insights, the thesis demonstrates HIOS energy-level alignment tuning within an unprecedented energy range. (Sub)monolayers of organic molecular donors and acceptors are introduced as an interlayer to modify HIOS interface-energy levels. By studying numerous HIOS with varying properties, the author derives generally valid systematic insights into the fundamental processes at work. In addition to molecular pinning levels, he identifies adsorption-induced band bending and gap-state density of states as playing a crucial role in the interlayer-modified energy-level alignment, thus laying the foundation for rationally controlling HIOS interface electronic properties. The thesis also presents quantitative descriptions of many aspects of the processes, opening the door for innovative HIOS interfaces and for future applications of ZnO in electronic devices. .

Перейти: https://doi.org/10.1007/978-3-319-46624-8

Дод.точки доступу:
Schlesinger, Raphael. \.\; SpringerLink (Online service)
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12.

    Shen, Shun-Qing.
    Topological Insulators [[electronic resource] :] : dirac Equation in Condensed Matter / / Shun-Qing. Shen ; . - 2nd ed. 2017. - [S. l. : s. n.]. - XIII, 266 p. 63 illus., 10 illus. in color. - Б. ц.
    Зміст:
Introduction --
Starting from the Dirac equation --
Minimal lattice model for topological insulator --
Topological invariants --
Topological phases in one dimension --
Quantum anomalous Hall effect and Quantum spin Hall effect --
Three-dimensional topological insulators --
Impurities and defects in topological insulators --
Topological superconductors and superfluids --
Majorana fermions in topological insulators --
Topological Dirac and Weyl Semimetals --
Topological Anderson Insulator --
Summary: Symmetry and Topological Classification.
Рубрики: Semiconductors.
   Solid state physics.
   Optical materials.
   Electronic materials.
   Semiconductors.
   Solid State Physics.
   Optical and Electronic Materials.
Анотація: This new edition presents a unified description of these insulators from one to three dimensions based on the modified Dirac equation. It derives a series of solutions of the bound states near the boundary, and describes the current status of these solutions. Readers are introduced to topological invariants and their applications to a variety of systems from one-dimensional polyacetylene, to two-dimensional quantum spin Hall effect and p-wave superconductors, three-dimensional topological insulators and superconductors or superfluids, and topological Weyl semimetals, helping them to better understand this fascinating field. To reflect research advances in topological insulators, several parts of the book have been updated for the second edition, including: Spin-Triplet Superconductors, Superconductivity in Doped Topological Insulators, Detection of Majorana Fermions and so on. In particular, the book features a new chapter on Weyl semimetals, a topic that has attracted considerable attention and has already become a new hotpot of research in the community. .

Перейти: https://doi.org/10.1007/978-981-10-4606-3

Дод.точки доступу:
Shen, Shun-Qing. \.\; SpringerLink (Online service)
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13.

    Egorov, Nikolay.
    Field Emission Electronics [[electronic resource] /] : монография / Nikolay. Egorov, Sheshin, Evgeny. ; . - 1st ed. 2017. - [S. l. : s. n.]. - XIV, 568 p. 328 illus., 21 illus. in color. - Б. ц.
    Зміст:
Introduction --
Basic principles --
Experimental equipment and technique --
Modern developments in theoretical research of field emission --
Simulation of structure and parameters of field emission cathodes --
Field-emission cathodes --
Carbon-based field-emission cathodes --
Computation of field-emission cathode-based electron guns --
Field-emission cathode-based devices and equipment. .
Рубрики: Electronic circuits.
   Electronics.
   Microelectronics.
   Optical materials.
   Electronic materials.
   Nanotechnology.
   Semiconductors.
   Electronic Circuits and Devices.
   Electronics and Microelectronics, Instrumentation.
   Optical and Electronic Materials.
   Nanotechnology and Microengineering.
   Semiconductors.
Анотація: This book is dedicated to field emission electronics, a promising field at the interface between “classic” vacuum electronics and nanotechnology. In addition to theoretical models, it includes detailed descriptions of experimental and research techniques and production technologies for different types of field emitters based on various construction principles. It particularly focuses on research into and production of field cathodes and electron guns using recently developed nanomaterials and carbon nanotubes. Further, it discusses the applications of field emission cathodes in new technologies such as light sources, flat screens, microwave and X-ray devices.

Перейти: https://doi.org/10.1007/978-3-319-56561-3

Дод.точки доступу:
Sheshin, Evgeny.; Egorov, Nikolay. \.\; SpringerLink (Online service)
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14.

    de la Barrera, la Barrera, Sergio C.
    Layered Two-Dimensional Heterostructures and Their Tunneling Characteristics [[electronic resource] /] : монография / la Barrera, Sergio C. de la Barrera ; . - 1st ed. 2017. - [S. l. : s. n.]. - XVII, 141 p. 55 illus., 48 illus. in color. - Б. ц.
Рубрики: Semiconductors.
   Nanoscale science.
   Nanoscience.
   Nanostructures.
   Surfaces (Physics).
   Interfaces (Physical sciences).
   Thin films.
   Spectroscopy.
   Microscopy.
   Semiconductors.
   Nanoscale Science and Technology.
   Surface and Interface Science, Thin Films.
   Spectroscopy and Microscopy.
Анотація: This thesis demonstrates that layered heterostructures of two-dimensional crystals graphene, hexagonal boron nitride, and transition metal dichalcogenides provide new and interesting interlayer transport phenomena. Low-energy electron microscopy is employed to study the surface of atomically thin WSe2 prepared by metal-organic chemical vapor deposition on epitaxial graphene substrates, and a method for unambiguously measuring the number of atomic layers is presented. Using very low-energy electrons to probe the surface of similar heterostructures, a relationship between extracted work function differences from the layers and the nature of the electrical contact between them is revealed. An extension of this analysis is applied to surface studies of MoSe2 prepared by molecular beam epitaxy on epitaxial graphene. A large work function difference is measured between the MoSe2 and graphene, and a model is provided which suggests that this observation results from an exceptional defect density in the MoSe2 film. The thesis expounds a theory for computing tunneling currents between two-dimensional crystals separated by a thin insulating barrier; a few situations resulting in resonant tunneling and negative differential resistance are illustrated by computed examples, as well as observed characteristics, for monolayer and bilayer graphene tunneling junctions and transistors.

Перейти: https://doi.org/10.1007/978-3-319-69257-9

Дод.точки доступу:
de la Barrera, Sergio C. \.\; SpringerLink (Online service)
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15.

    Hamaguchi, Chihiro.
    Basic Semiconductor Physics [[electronic resource] /] : монография / Chihiro. Hamaguchi ; . - 3rd ed. 2017. - [S. l. : s. n.]. - XXI, 709 p. 315 illus. - Б. ц.
    Зміст:
Preface to the Third Edition --
Energy Band Structures of Semiconductors --
Cyclotron Resonance and Energy Band Structures --
Wannier Function and Effective Mass Approximation --
Optical Properties 1 --
Optical Properties 2 --
Electron-Phonon Interaction and Electron Transport --
Magnetotransport Phenomena --
Quantum Structures --
Light Emission and Laser.
Рубрики: Semiconductors.
   Materials science.
   Electronics.
   Microelectronics.
   Optical materials.
   Electronic materials.
   Semiconductors.
   Characterization and Evaluation of Materials.
   Electronics and Microelectronics, Instrumentation.
   Optical and Electronic Materials.
Анотація: This book presents a detailed description of basic semiconductor physics. The text covers a wide range of important phenomena in semiconductors, from the simple to the advanced. Four different methods of energy band calculations in the full band region are explained: local empirical pseudopotential, non-local pseudopotential, KP perturbation and tight-binding methods. The effective mass approximation and electron motion in a periodic potential, Boltzmann transport equation and deformation potentials used for analysis of transport properties are discussed. Further, the book examines experiments and theoretical analyses of cyclotron resonance in detail. Optical and transport properties, magneto-transport, two-dimensional electron gas transport (HEMT and MOSFET) and quantum transport are reviewed, while optical transition, electron-phonon interaction and electron mobility are also addressed. Energy and electronic structure of a quantum dot (artificial atom) are explained with the help of Slater determinants. The physics of semiconductor lasers is also described, including Einstein coefficients, stimulated emission, spontaneous emission, laser gain, double heterostructures, blue lasers, optical confinement, laser modes, and strained quantum well lasers, offering insights into the physics of various kinds of semiconductor lasers. In this third edition, energy band calculations in full band zone with spin-orbit interaction are presented, showing all the matrix elements and equipping the reader to prepare computer programs of energy band calculations. The Luttinger Hamiltonian is discussed and used to analyze the valence band structure. Numerical calculations of scattering rate, relaxation time, and mobility are presented for typical semiconductors, which are very helpful for understanding of transport. Nitrides such as GaN, InN, AlN and their ternary alloys are very important materials for the blue light emission, and high power devic es with and high frequency. .

Перейти: https://doi.org/10.1007/978-3-319-66860-4

Дод.точки доступу:
Hamaguchi, Chihiro. \.\; SpringerLink (Online service)
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16.

    Fang, Zujie.
    Single Frequency Semiconductor Lasers [[electronic resource] /] : монография / Zujie. Fang, Cai, Haiwen., Chen, Gaoting., Qu, Ronghui. ; . - 1st ed. 2017. - [S. l. : s. n.]. - XIII, 306 p. 188 illus., 4 illus. in color. - Б. ц.
    Зміст:
Chapter 1 Introduction --
Chapter 2 Characteristics of Semiconductor Laser --
Chapter 3 Linewidth and Noise of Semiconductor Laser --
Chapter 4 Monolithic Single Frequency Semiconductor Lasers --
Chapter 5 External Cavity Semiconductor Lasers --
Chapter 6 Frequency Stabilization of Semiconductor Lasers    --
Chapter 7 Frequency Sweeping --
Chapter 8 Frequency Translation and Optical Phase Locked Loop --
Chapter 9 Applications of Single Frequency Semiconductor Lasers.
Рубрики: Lasers.
   Photonics.
   Microwaves.
   Optical engineering.
   Semiconductors.
   Optics, Lasers, Photonics, Optical Devices.
   Microwaves, RF and Optical Engineering.
   Semiconductors.
Анотація: This book systematically introduces the single frequency semiconductor laser, which is widely used in many vital advanced technologies, such as the laser cooling of atoms and atomic clock, high-precision measurements and spectroscopy, coherent optical communications, and advanced optical sensors. It presents both the fundamentals and characteristics of semiconductor lasers, including basic F-P structure and monolithic integrated structures; interprets laser noises and their measurements; and explains mechanisms and technologies relating to the main aspects of single frequency lasers, including external cavity lasers, frequency stabilization technologies, frequency sweeping, optical phase locked loops, and so on. It paints a clear, physical picture of related technologies and reviews new developments in the field as well. It will be a useful reference to graduate students, researchers, and engineers in the field.

Перейти: https://doi.org/10.1007/978-981-10-5257-6

Дод.точки доступу:
Cai, Haiwen.; Chen, Gaoting.; Qu, Ronghui.; Fang, Zujie. \.\; SpringerLink (Online service)
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17.

    Jumpertz, Louise.
    Nonlinear Photonics in Mid-infrared Quantum Cascade Lasers [[electronic resource] /] : монография / Louise. Jumpertz ; . - 1st ed. 2017. - [S. l. : s. n.]. - XXIII, 134 p. 100 illus., 6 illus. in color. - Б. ц.
    Зміст:
Introduction --
Quantum Cascade Lasers: Performant Mid-infrared Sources --
Optical Feedback in Interband Lasers --
Impact of Optical Feedback on Quantum Cascade Lasers --
Beam Shaping in Broad-Area Quantum Cascade Lasers Using Optical Feedback --
Impact of Optical Injection on Quantum Cascade Lasers --
Conclusions and Perspectives.
Рубрики: Lasers.
   Photonics.
   Statistical physics.
   Semiconductors.
   Optics, Lasers, Photonics, Optical Devices.
   Applications of Nonlinear Dynamics and Chaos Theory.
   Semiconductors.
Анотація: This thesis presents the first comprehensive analysis of quantum cascade laser nonlinear dynamics and includes the first observation of a temporal chaotic behavior in quantum cascade lasers. It also provides the first analysis of optical instabilities in the mid-infrared range. Mid-infrared quantum cascade lasers are unipolar semiconductor lasers, which have become widely used in applications such as gas spectroscopy, free-space communications or optical countermeasures. Applying external perturbations such as optical feedback or optical injection leads to a strong modification of the quantum cascade laser properties. Optical feedback impacts the static properties of mid-infrared Fabry–Perot and distributed feedback quantum cascade lasers, inducing power increase; threshold reduction; modification of the optical spectrum, which can become either single- or multimode; and enhanced beam quality in broad-area transverse multimode lasers. It also leads to a different dynamical behavior, and a quantum cascade laser subject to optical feedback can oscillate periodically or even become chaotic. A quantum cascade laser under external control could therefore be a source with enhanced properties for the usual mid-infrared applications, but could also address new applications such as tunable photonic oscillators, extreme events generators, chaotic Light Detection and Ranging (LIDAR), chaos-based secured communications or unpredictable countermeasures.

Перейти: https://doi.org/10.1007/978-3-319-65879-7

Дод.точки доступу:
Jumpertz, Louise. \.\; SpringerLink (Online service)
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18.

    Baranov, Pavel G.
    Magnetic Resonance of Semiconductors and Their Nanostructures [[electronic resource] :] : basic and Advanced Applications / / Pavel G. Baranov, von Bardeleben, Hans Jurgen., Jelezko, Fedor., Wrachtrup, Jorg. ; . - 1st ed. 2017. - [S. l. : s. n.]. - XV, 524 p. 190 illus., 40 illus. in color. - Б. ц.
    Зміст:
Preface --
Basic Concepts of Electron Paramagnetic Resonance (EPR) --
Fundamentals of EPR Related Methods --
Magnetic Resonance Studies of Intrinsic Defects in Semiconductors --
State-of-Art: High-Frequency EPR, ESE, ENDOR and ODMR in Wide-Band-Gap Semiconductors --
Magnetic Resonance in Semiconductor Micro- and Nanostructures --
Perspectives of Applications of Magnetic Properties of Semiconductor Nanostructures and Single Defects.
Рубрики: Semiconductors.
   Spectroscopy.
   Materials science.
   Magnetism.
   Magnetic materials.
   Nanotechnology.
   Physics.
   Semiconductors.
   Spectroscopy/Spectrometry.
   Characterization and Evaluation of Materials.
   Magnetism, Magnetic Materials.
   Nanotechnology.
   Applied and Technical Physics.
Анотація: This book explains different magnetic resonance (MR) techniques and uses different combinations of these techniques to analyze defects in semiconductors and nanostructures. It also introduces novelties such as single defects MR and electron-paramagnetic-resonance-based methods: electron spin echo, electrically detected magnetic resonance, optically detected magnetic resonance and electron-nuclear double resonance – the designated tools for investigating the structural and spin properties of condensed systems, living matter, nanostructures and nanobiotechnology objects. Further, the authors address problems existing in semiconductor and nanotechnology sciences that can be resolved using MR, and discuss past, current and future applications of MR, with a focus on advances in MR methods. The book is intended for researchers in MR studies of semiconductors and nanostructures wanting a comprehensive review of what has been done in their own and related fields of study, as well as future perspectives.

Перейти: https://doi.org/10.1007/978-3-7091-1157-4

Дод.точки доступу:
von Bardeleben, Hans Jurgen.; Jelezko, Fedor.; Wrachtrup, Jorg.; Baranov, Pavel G. \.\; SpringerLink (Online service)
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19.

    Quantum Plasmonics [[electronic resource] /] : монография / ed.: Bozhevolnyi, Sergey I., Martin-Moreno, Luis., Garcia-Vidal, Francisco. - 1st ed. 2017. - [S. l. : s. n.]. - XVII, 327 p. 139 illus., 74 illus. in color. - Б. ц.
    Зміст:
Waveguide Quantum Electrodynamics --
Quantum Emitters for Plasmonics --
New Materials for Quantum Plasmonics --
Collective Strong Coupling --
Lasing in Plasmonic Structures --
Quantum Effects in Nanogaps.
Рубрики: Lasers.
   Photonics.
   Quantum optics.
   Semiconductors.
   Microwaves.
   Optical engineering.
   Optical materials.
   Electronic materials.
   Nanotechnology.
   Optics, Lasers, Photonics, Optical Devices.
   Quantum Optics.
   Semiconductors.
   Microwaves, RF and Optical Engineering.
   Optical and Electronic Materials.
   Nanotechnology and Microengineering.
Анотація: This book presents the latest results of quantum properties of light in the nanostructured environment supporting surface plasmons, including waveguide quantum electrodynamics, quantum emitters, strong-coupling phenomena and lasing in plasmonic structures. Different approaches are described for controlling the emission and propagation of light with extreme light confinement and field enhancement provided by surface plasmons. Recent progress is reviewed in both experimental and theoretical investigations within quantum plasmonics, elucidating the fundamental physical phenomena involved and discussing the realization of quantum-controlled devices, including single-photon sources, transistors and ultra-compact circuitry at the nanoscale. .

Перейти: https://doi.org/10.1007/978-3-319-45820-5

Дод.точки доступу:
Bozhevolnyi, Sergey I. \ed.\; Martin-Moreno, Luis. \ed.\; Garcia-Vidal, Francisco. \ed.\; SpringerLink (Online service)
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20.

    Schmeckebier, Holger.
    Quantum-Dot-Based Semiconductor Optical Amplifiers for O-Band Optical Communication [[electronic resource] /] : монография / Holger. Schmeckebier ; . - 1st ed. 2017. - [S. l. : s. n.]. - XXIII, 190 p. 109 illus., 59 illus. in color. - Б. ц.
    Зміст:
Introduction --
Semiconductor Optical Ampli?ers (SOAs) --
Samples and Characterization --
Introduction to System Experiments --
Concept of Direct Phase Modulation --
Signal Ampli?cation --
Concept of Dual-Band Ampli?ers --
Signal Processing - Wavelength Conversion --
Summary and Outlook.
Рубрики: Semiconductors.
   Lasers.
   Photonics.
   Signal processing.
   Image processing.
   Speech processing systems.
   Semiconductors.
   Optics, Lasers, Photonics, Optical Devices.
   Signal, Image and Speech Processing.
Анотація: This thesis examines the unique properties of gallium arsenide (GaAs)-based quantum-dot semiconductor optical amplifiers for optical communication networks, introducing readers to their fundamentals, basic parameters and manifold applications. The static and dynamic properties of these amplifiers are discussed extensively in comparison to conventional, non quantum-dot based amplifiers, and their unique advantages are elaborated on, such as the fast carrier dynamics and the decoupling of gain and phase dynamics. In addition to diverse amplification scenarios involving single and multiple high symbol rate amplitude and phase-coded data signals, wide-range wavelength conversion as a key functionality for optical signal processing is investigated and discussed in detail. Furthermore, two novel device concepts are developed and demonstrated that have the potential to significantly simplify network architectures, reducing the investment and maintenance costs as well as the energy consumption of future networks. .

Перейти: https://doi.org/10.1007/978-3-319-44275-4

Дод.точки доступу:
Schmeckebier, Holger. \.\; SpringerLink (Online service)
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(Асоціація ЕБНІТ)