Charge-Trapping Non-Volatile Memories [[electronic resource] :] : volume 2--Emerging Materials and Structures / / ed. Dimitrakis, Panagiotis. - 1st ed. 2017. - [S. l. : s. n.]. - V, 211 p. 170 illus., 117 illus. in color. - Б. ц.     Зміст: Materials and Device Reliability in SONOS Memories -- Charge-Trap-Non-Volatile Memory and Focus on Flexible Flash Memory Devices -- Hybrid Memories Based on Redox Molecules -- Organic Floating-Gate Memory Structures -- Nanoparticles Based Flash-like Non Volatile Memories: Cluster Beam Synthesis of Metallic Nanoparticles and Challenges for the Overlying Control Oxide Layer. Рубрики: Nanotechnology.    Electronic circuits.    Electronics.    Microelectronics.    Computer memory systems.    Engineering—Materials.    Nanotechnology.    Electronic Circuits and Devices.    Electronics and Microelectronics, Instrumentation.    Memory Structures.    Materials Engineering. Анотація: This book describes the technology of charge-trapping non-volatile memories and their uses. The authors explain the device physics of each device architecture and provide a concrete description of the materials involved and the fundamental properties of the technology. Modern material properties, used as charge-trapping layers, for new applications are introduced. Provides a comprehensive overview of the technology for charge-trapping non-volatile memories; Details new architectures and current modeling concepts for non-volatile memory devices; Focuses on conduction through multi-layer gate dielectrics stacks. Перейти: https://doi.org/10.1007/978-3-319-48705-2 Дод.точки доступу: Dimitrakis, Panagiotis. \ed.\; SpringerLink (Online service) Свободных экз. нет